Effect of Al on the sharpness of the MgSiO3 perovskite to post‐perovskite phase transition
10.1029/2005gl023192 · 2005 · Geophysical Research Letters
S. Akber‐Knutson; Gerd Steinle‐Neumann; Paul D. Asimow
10 EOS records from this paper
| Phase | Composition | Tref | V₀ | K₀ (GPa) | K′ | EOS model | Method note | Origin | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Bridgmanite |
|
— | 41.75 ų Unit cell |
235 | 3.840 | third-order Birch-Murnaghan | — | Original | ||||||
| Why this differs from similar rows: Al-free (0 mol% Al2O3) end-member perovskite; sibling rows are Al-bearing perovskite with different substitution mechanisms (CCM, OVM, AlHM), same normalized MgSiO3 formula. | ||||||||||||||
| Bridgmanite |
|
— | 41.86 ų Unit cell |
232 | 3.860 | third-order Birch-Murnaghan | — | Original | ||||||
| Why this differs from similar rows: 6.25 mol% Al2O3 via the charge-coupled mechanism (CCM: MgSi->AlAl); sibling rows use different Al content/substitution mechanisms (none, OVM, AlHM). | ||||||||||||||
| Bridgmanite |
|
— | 42.83 ų Unit cell |
205 | 4.030 | third-order Birch-Murnaghan | — | Original | ||||||
| Bridgmanite |
|
— | 42.36 ų Unit cell |
214 | 3.960 | third-order Birch-Murnaghan | — | Original | ||||||
| Why this differs from similar rows: 6.25 mol% Al2O3 via the oxygen-vacancy-forming mechanism (OVM: SiSiO->AlAl+vacancy); sibling rows use different Al content/substitution mechanisms. | ||||||||||||||
| Bridgmanite |
|
— | 42.2 ų Unit cell |
228 | 3.850 | third-order Birch-Murnaghan | — | Original | ||||||
| Why this differs from similar rows: 3.125 mol% Al2O3 via the hydrous Al substitution mechanism (AlHM: Si->AlH); sibling rows use different Al content/substitution mechanisms. | ||||||||||||||
| Post-perovskite |
|
— | 41.83 ų Unit cell |
204 | 4.180 | third-order Birch-Murnaghan | — | Original | ||||||
| Why this differs from similar rows: Al-free (0 mol% Al2O3) end-member post-perovskite composition; sibling rows are Al-bearing post-perovskite with different substitution mechanisms (CCM, OVM, AlHM). | ||||||||||||||
| Post-perovskite |
|
— | 41.79 ų Unit cell |
207 | 4.130 | third-order Birch-Murnaghan | — | Original | ||||||
| Why this differs from similar rows: 6.25 mol% Al2O3 via the charge-coupled mechanism (CCM: MgSi->AlAl); sibling rows use different Al content/substitution mechanisms. | ||||||||||||||
| Post-perovskite |
|
— | 41.78 ų Unit cell |
201 | 4.290 | third-order Birch-Murnaghan | — | Original | ||||||
| Post-perovskite |
|
— | 42.33 ų Unit cell |
194 | 4.150 | third-order Birch-Murnaghan | — | Original | ||||||
| Why this differs from similar rows: 6.25 mol% Al2O3 via the oxygen-vacancy-forming mechanism (OVM: SiSiO->AlAl+vacancy); sibling rows use different Al content/substitution mechanisms. | ||||||||||||||
| Post-perovskite |
|
— | 41.64 ų Unit cell |
228 | 3.860 | third-order Birch-Murnaghan | — | Original | ||||||
| Why this differs from similar rows: 3.125 mol% Al2O3 via the hydrous Al substitution mechanism (AlHM: Si->AlH); sibling rows use different Al content/substitution mechanisms. | ||||||||||||||